INTEL and Micron have announced a 128Gb NAND flash memory device, the world’s first 20nm multilevel-cell (MLC) device at that capacity.
The companies have also announced mass production of their 64Gb 20nm NAN.
Developed through Intel and Micron's joint-development venture, IM Flash Technologies (IMFT), the new 20nm monolithic 128Gb device is the first in the industry to enable a terabit (Tb) of data storage in a fingertip-size package by using just eight die.
The 128Gb device provides twice the storage capacity and performance of the companies' existing 20nm 64Gb NAND device. It meets the high-speed ONFI 3.0 specification, achieving speeds of 333 megatransfers per second (MT/s).
According to Intel and Micron, the device will be particularly useful in the next generation of tablets, smartphones and high-capacity solid-state drives.
The companies say the key to their success with 20nm process technology is due to an innovative new cell structure that enables more aggressive cell scaling than conventional architectures.
The 20nm NAND uses a planar cell structure to overcome the inherent difficulties that accompany advanced process technology, enabling performance and reliability on par with the previous generation.
The planar cell structure successfully breaks the scaling constraints of the standard NAND floating gate cell by integrating the first Hi-K/metal gate stack on NAND production.
Intel and Micron unveil 128Gb NAND flash memory Electronics News
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